The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jan. 10, 2003
Isao Yamada, Himeji, JP;
Jiro Matsuo, Kyoto, JP;
Noriaki Toyoda, Himeji, JP;
Kazutoshi Murata, Tamano, JP;
Naomasa Miyatake, Tamano, JP;
Isao Yamada, Himeji, JP;
Jiro Matsuo, Kyoto, JP;
Noriaki Toyoda, Himeji, JP;
Kazutoshi Murata, Tamano, JP;
Naomasa Miyatake, Tamano, JP;
Mitsui Engineering & Shipbuilding Co., Ltd., Tokyo, JP;
Abstract
The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*10atoms/cmor less to produce the SiC monitor wafer.