The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Jan. 17, 2003
Lawrence Lui, Panchiao, TW;
Chia-shia Tsai, Hsin-chu, TW;
Chao-cheng Chen, Tainan County, TW;
Jen-cheng Liu, Chia-Yi, TW;
Lawrence Lui, Panchiao, TW;
Chia-Shia Tsai, Hsin-chu, TW;
Chao-Cheng Chen, Tainan County, TW;
Jen-Cheng Liu, Chia-Yi, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of protecting an underlying diffusion barrier layer in a dual damascene trench and via etch process with a coating of negative photoresist. The dual damascene process starts with via hole etching in an intermetal dielectric (IMD) layer. Next, the thin film barrier layer is deposited and patterned to fill the bottom of the vias. The key process step is a coating of negative photoresist which is exposed and developed to partially fill the via openings. This thick layer of negative photoresist in the vias protects the thin diffusion barrier layer from subsequent dual damascene etch processing.