The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Sep. 28, 2001
Andrew Ott, Hillsboro, OR (US);
Lawrence Wong, Beaverton, OR (US);
Patrick Morrow, Portland, OR (US);
Jihperng Leu, Portland, OR (US);
Grant M. Kloster, Hillsboro, OR (US);
Andrew Ott, Hillsboro, OR (US);
Lawrence Wong, Beaverton, OR (US);
Patrick Morrow, Portland, OR (US);
Jihperng Leu, Portland, OR (US);
Grant M. Kloster, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.