The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Mar. 09, 2004
Yasuhiro Shimamoto, Hachioji, JP;
Masahiko Hiratani, Akishima, JP;
Yuichi Matsui, Kokubunji, JP;
Toshihide Nabatame, Tsukuba, JP;
Yasuhiro Shimamoto, Hachioji, JP;
Masahiko Hiratani, Akishima, JP;
Yuichi Matsui, Kokubunji, JP;
Toshihide Nabatame, Tsukuba, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A process for forming the lower and upper electrodes of a high dielectric constant capacitor in a semiconductor device from an organoruthenium compound by chemical vapor deposition. This chemical vapor deposition technique employs an organoruthenium compound, an oxidizing gas, and a gas (such as argon) which is hardly adsorbed to the ruthenium surface or a gas (such as ethylene) which is readily adsorbed to the ruthenium surface. This process efficiently forms a ruthenium film with good conformality in a semiconductor device.