The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Dec. 23, 2002
Shingo Kanamitsu, Kawasaki, JP;
Takashi Hirano, Kawasaki, JP;
Fumiaki Shigemitsu, Yokohama, JP;
Motosuke Miyoshi, Tokyo, JP;
Kazuyoshi Sugihara, Miura-gun, JP;
Yuichiro Yamazaki, Tokyo, JP;
Makoto Sekine, Yokohama, JP;
Takayuki Sakai, Chofu, JP;
Ichiro Mori, Yokohama, JP;
Katsuya Okumura, Tokyo, JP;
Shingo Kanamitsu, Kawasaki, JP;
Takashi Hirano, Kawasaki, JP;
Fumiaki Shigemitsu, Yokohama, JP;
Motosuke Miyoshi, Tokyo, JP;
Kazuyoshi Sugihara, Miura-gun, JP;
Yuichiro Yamazaki, Tokyo, JP;
Makoto Sekine, Yokohama, JP;
Takayuki Sakai, Chofu, JP;
Ichiro Mori, Yokohama, JP;
Katsuya Okumura, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.