The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Dec. 04, 2003
Shiu-ko Jangjian, Fengshan, TW;
Jun Wu, Kuenshan Shiang, TW;
Chi-wen Liu, Hsinchu, TW;
Ying-lung Wang, Lungjing Shiang, TW;
Yi-lung Cheng, Taipei, TW;
Michael Chang, Hsinchu, TW;
Szu-an Wu, Hsin-Chu, TW;
Shiu-Ko Jangjian, Fengshan, TW;
Jun Wu, Kuenshan Shiang, TW;
Chi-Wen Liu, Hsinchu, TW;
Ying-Lung Wang, Lungjing Shiang, TW;
Yi-Lung Cheng, Taipei, TW;
Michael Chang, Hsinchu, TW;
Szu-An Wu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for fabricating a dielectric layer provides for use of a carbon source material separate from a halogen source material when forming a carbon and halogen doped silicate glass dielectric layer. The use of separate carbon and halogen source materials provides enhanced process latitude when forming the carbon and halogen doped silicate glass dielectric layer. Such a carbon and halogen doped silicate glass dielectric layer having a dielectric constant greater than about 3.0 is particularly useful as an intrinsic planarizing stop layer within a damascene method. A bilayer dielectric layer construction comprising a carbon and halogen doped silicate glass and a carbon doped silicate glass dielectric layer absent halogen doping is useful within a dual damascene method.