The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2005

Filed:

May. 10, 2004
Applicants:

Keizo Yamada, Tokyo, JP;

Yousuke Itagaki, Tokyo, JP;

Takeo Ushiki, Tokyo, JP;

Tohru Tsujide, Tokyo, JP;

Inventors:

Keizo Yamada, Tokyo, JP;

Yousuke Itagaki, Tokyo, JP;

Takeo Ushiki, Tokyo, JP;

Tohru Tsujide, Tokyo, JP;

Assignee:

Fab Solutions, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R031/02 ;
U.S. Cl.
CPC ...
Abstract

In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam, having a variable acceleration voltage, on the one or more contact holes and/or vias. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated at a plurality of acceleration voltages on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current measured for the plurality of acceleration voltages of the electron beam.


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