The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Sep. 16, 2003
David L O'meara, Poughkeepsie, NY (US);
Cory Wajda, Mesa, AZ (US);
Tsuyoshi Takahashi, Nirasaki, JP;
Alessandro Callegari, Yorktown Heights, NY (US);
Kristen Scheer, Milton, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
Paul Jamison, Hopewell Junction, NY (US);
David L O'Meara, Poughkeepsie, NY (US);
Cory Wajda, Mesa, AZ (US);
Tsuyoshi Takahashi, Nirasaki, JP;
Alessandro Callegari, Yorktown Heights, NY (US);
Kristen Scheer, Milton, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
Paul Jamison, Hopewell Junction, NY (US);
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.