The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Oct. 17, 2003
Jaw-jung Shin, Hsin-Chu, TW;
Chun-kuang Chen, Taoyuang, TW;
Tsai-sheng Gau, San-Chung, TW;
Burn-jeng Lin, Hsin-Chu, TW;
Li-chun Tien, Hsin-Chu, TW;
Mi-chang Chang, Hsin-Chu, TW;
Yu-jun Chou, Taipei, TW;
Jan-wen You, Taoyuang, TW;
King-chang Shu, Taipei, TW;
Li-jui Chen, Hsin-Chu, TW;
Jaw-Jung Shin, Hsin-Chu, TW;
Chun-Kuang Chen, Taoyuang, TW;
Tsai-Sheng Gau, San-Chung, TW;
Burn-Jeng Lin, Hsin-Chu, TW;
Li-Chun Tien, Hsin-Chu, TW;
Mi-Chang Chang, Hsin-Chu, TW;
Yu-Jun Chou, Taipei, TW;
Jan-Wen You, Taoyuang, TW;
King-Chang Shu, Taipei, TW;
Li-Jui Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of identifying and defining forbidden pitches or forbidden pitch ranges for a lithographic exposure tool under a given set of exposure conditions is provided. In the method, a computer simulation is performed, and its results are compared to frequently used pitches to see if such frequently used pitches may yield depth-of-focus (DOF) values greater than the focus budget for the exposure tool. If so, a verification test is performed by using a test mask and actually exposing a surface with the same pattern pitches simulated. From this, actual DOF values are obtained and compared to the focus budget of the exposure tool. Any pitches having a DOF value greater than the focus budget are designated as forbidden pitches. This forbidden pitch information may be integrated into a design rule to restrict the use of such forbidden pitches under the given exposure conditions where they are likely to arise.