The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Apr. 07, 2003
Christian Ebi, Haimhausen, DE;
Frank Erber, München, DE;
Torsten Franke, München, DE;
Fritz Gans, Dresden, DE;
Tarek Lutz, München, DE;
Günther Ruhl, Dorfen, DE;
Bernd Schönherr, Blaustein, DE;
Christian Ebi, Haimhausen, DE;
Frank Erber, München, DE;
Torsten Franke, München, DE;
Fritz Gans, Dresden, DE;
Tarek Lutz, München, DE;
Günther Ruhl, Dorfen, DE;
Bernd Schönherr, Blaustein, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for compensating for scatter/reflection effects in particle beam lithography includes the following steps: providing at least one layer of a material that is sensitive to particle beams, using at least one particle beam to write predetermined patterns in a limited area of the material that is sensitive to particle beams, and using at least one particle beam to write at least one frame, which surrounds the limited area, into the material that is sensitive to particle beams so that variations in the background dose within the limited area are less than 30% of the maximum background dose within the limited area. This provides the advantage that a considerably more homogeneous background dose and hence considerably less variation in the CD measure, can be produced within the area that is written to by the particle beam, in a simple and cost-effective manner.