The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Nov. 12, 2003
Applicants:
Eric Wagganer, Fremont, CA (US);
Helen H. Zhu, Fremont, CA (US);
Daniel Le, Santa Clara, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Inventors:
Eric Wagganer, Fremont, CA (US);
Helen H. Zhu, Fremont, CA (US);
Daniel Le, Santa Clara, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.