The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Jan. 23, 2002
Chuan-chieh Huang, Hsin-Chu, TW;
Feng-yueh Chang, Banchiau, TW;
Chi-lien Lin, Chia-Yi, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a narrow diameter opening in an insulator layer, featuring a vertical shape profile, has been developed. Using a photoresist shape as an etch mask a first plasma procedure is used to form an initial opening, with a tapered profile shape, in the insulator layer exposing a portion of the top surface of an underlying stop layer. The first plasma procedure results in formation of a thin polymer layer located at the bottom of the initial opening. A second plasma procedure performed in situ, results in deposition of additional polymer layer, comprised of carbon and fluorine, at the bottom of the initial opening. This is followed by a third plasma procedure, performed in situ in an oxygen plasma, removing polymer and releasing fluorine based radicals which etch portions of insulator layer exposed at the bottom of the initial opening, resulting in a final opening featuring a vertical profile shape.