The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Sep. 24, 2002
Jörn Lützen, Dresden, DE;
Barbara Schmidt, Dresden, DE;
Stefan Rongen, Dresden, DE;
Martin Schrems, Eggersdorf B. Graz, AT;
Daniel Köhler, Dresden, DE;
Jörn Lützen, Dresden, DE;
Barbara Schmidt, Dresden, DE;
Stefan Rongen, Dresden, DE;
Martin Schrems, Eggersdorf B. Graz, AT;
Daniel Köhler, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
To fabricate a trench capacitor in a substrate, a trench is formed in the substrate. The trench has an upper region and a lower region. In the trench, first of all nanocrystallites and/or a seed layer for nanocrystallites are deposited in the upper region and the lower region. Then, the nanocrystallites and/or the seed layer are removed from the upper region of the trench by means of an etching process. The etching parameters of the etching process are selected in such a way that the seed layer and/or the nanocrystallites which are uncovered in the upper region and the lower region are removed only from the upper region. Consequently, an expensive mask layer can be avoided in the lower region of the trench.