The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Feb. 05, 2004
Liang-gi Yao, Hsin-Chu, TW;
Kuen-chyr Lee, Hsin-Chu, TW;
Shih-chang Chen, Hsin-Chu, TW;
Mong-song Liang, Hsin-Chu, TW;
Liang-Gi Yao, Hsin-Chu, TW;
Kuen-Chyr Lee, Hsin-Chu, TW;
Shih-Chang Chen, Hsin-Chu, TW;
Mong-Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an Si—Ge epitaxial layer comprising the following steps. A structure is provided and a doped Si—Ge seed layer is formed thereover. The doped Si—Ge seed layer having increased nucleation sites. A Si—Ge epitaxial layer upon the doped Si—Ge seed layer whereby the Si—Ge epitaxial layer lacks discontinuity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile