The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Sep. 18, 2002
Siyi LI, Fremont, CA (US);
S.m. Rega Sadjadi, Saratoga, CA (US);
Sean S. Kang, Fremont, CA (US);
Tri Le, Milpitas, CA (US);
Bi-ming Yen, Fremont, CA (US);
Scott Briggs, Menlo Park, CA (US);
SiYi Li, Fremont, CA (US);
S.M. Rega Sadjadi, Saratoga, CA (US);
Sean S. Kang, Fremont, CA (US);
Tri Le, Milpitas, CA (US);
Bi-Ming Yen, Fremont, CA (US);
Scott Briggs, Menlo Park, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
The invention is a method of etching an integrated circuit (IC) structure that includes a metal hard mask layer. The etching of the metal hard mask layer is performed by first feeding a gas mixture comprising a fluorine containing gas and oxygen (O) gas to a reactor. The method then proceeds to generate a plasma that etches the metal hard mask layer. The method can be applied to either performing a via etch or a trench etch. Additionally, the invention teaches the removal of a photoresist layer without affecting the metal hard mask layer.