The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Sep. 15, 2003
Haowen Bu, Plano, TX (US);
Shashank Ekbote, Irving, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Shaoping Tang, Plano, TX (US);
Freidoon Mehrad, Plano, TX (US);
Haowen Bu, Plano, TX (US);
Shashank Ekbote, Irving, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Shaoping Tang, Plano, TX (US);
Freidoon Mehrad, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention facilitates semiconductor device operation and fabrication by providing a cap-annealing process that improves channel electron mobility without substantially degrading PMOS transistor devices. The process uses an oxide/nitride composite-cap to alter the active dopant profile across the channel regions. During an annealing process, dopants migrate out of the Si/SiO2 in a channel region thereby altering the dopant profile of the channel region. This altered profile generally improves channel mobility thereby improving transistor performance and permitting smaller density designs.