The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Jul. 20, 2004
Chie Shishido, Yokohama, JP;
Hidetoshi Morokuma, Hitachinaka, JP;
Yuki Ojima, Hitachinaka, JP;
Maki Tanaka, Yokohama, JP;
Wataru Nagatomo, Yokohama, JP;
Chie Shishido, Yokohama, JP;
Hidetoshi Morokuma, Hitachinaka, JP;
Yuki Ojima, Hitachinaka, JP;
Maki Tanaka, Yokohama, JP;
Wataru Nagatomo, Yokohama, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.