The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2005

Filed:

May. 29, 2002
Applicants:

Hung-ta Huang, Ilan, TW;

Hsueh-li Sun, Youkan, TW;

Juinn-jie Chang, Tainan, TW;

Stanley Huang, Tainan, TW;

Jih-churng Twu, Chung-Ho, TW;

Tom Tseng, Hsin-Chu, TW;

Inventors:

Hung-Ta Huang, Ilan, TW;

Hsueh-Li Sun, Youkan, TW;

Juinn-Jie Chang, Tainan, TW;

Stanley Huang, Tainan, TW;

Jih-Churng Twu, Chung-Ho, TW;

Tom Tseng, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ; H01L021/331 ; H01L021/425 ; H01L021/36 ; H01L021/265 ;
U.S. Cl.
CPC ...
Abstract

A method of monitoring and adjusting the position of a wafer with respect to an ion beam including setting the position of a wafer holder so that a wafer to be held therein is positioned at a tilt angle of 45 degrees and a twist angle of 45 degrees with respect to the path of an ion beam; positioning a n-type wafer without screen oxide in the wafer holder; implanting boron species into a region of the wafer at 160 KeV and a dose level of 5.0×10atoms/cm; periodically measuring the sheet resistivity of a implanted wafer and readjusting the wafer tilt angle when the sheet resistivity is greater than 30 ohms/square.


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