The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2005

Filed:

Jun. 16, 2003
Applicants:

Wei Liu, San Jose, CA (US);

Thorsten B. Lill, Santa Clara, CA (US);

David S. L. Mui, Fremont, CA (US);

Christopher Dennis Bencher, San Jose, CA (US);

Inventors:

Wei Liu, San Jose, CA (US);

Thorsten B. Lill, Santa Clara, CA (US);

David S. L. Mui, Fremont, CA (US);

Christopher Dennis Bencher, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract

A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The features are formed on the substrate by removing the first mask and then etching the substrate using the second mask as an etch mask.

Published as:
WO2004001799A2; TW200402779A; US2004043623A1; WO2004001799A3; US6924191B2;

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