The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Jan. 24, 2002
Jeng H. Hwang, Cupertino, CA (US);
Steve S. Y. Mak, Pleasanton, CA (US);
True-lon Lin, Cupertino, CA (US);
Chentsau Ying, Cupertino, CA (US);
John W. Schaller, Morgan Hill, CA (US);
Jeng H. Hwang, Cupertino, CA (US);
Steve S. Y. Mak, Pleasanton, CA (US);
True-Lon Lin, Cupertino, CA (US);
Chentsau Ying, Cupertino, CA (US);
John W. Schaller, Morgan Hill, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl, HBr, and SiClmixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.