Jeng H Hwang

This inventor holds 24 USPTO granted patents, primarily in Plasma Etching Techniques. Top assignees: Applied Materials, Inc., Other. Active years: 1992-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeng H Hwang. Retrieved from https://idiyas.com/inventor/jeng-h-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 24

% Patents Active = 62.5

Average Co-Inventor Count = 2.2

ph-index = 12

Forward Citations = 630(Granted Patents)

Company Filing History:

19 out of 14,544

Applied Materials, Inc.

patents

5 out of 834,708

Other

patents

Years Active: 1992-2005

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Areas of Expertise:

Plasma Etching

Substrate Cleaning

High Density RAM

Magnetic Memory Cells

Anisotropic Profile

Dielectric Materials

Corrosion Prevention

Metal Etch Process

Platinum Etching

Lead Zirconium Titanate

Barium Strontium Titanate

RF Plasma Method

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6919168 - Masking methods and etching sequences for patterning electrodes of high density RAM capacitors (2005-07-19),

2. 6893893 - Method of preventing short circuits in magnetic film stacks (2005-05-17),

3. 6821907 - Etching methods for a magnetic memory cell stack (2004-11-23),

4. 6777342 - Method of plasma etching platinum (2004-08-17),

5. 6770567 - Method of reducing particulates in a plasma etch chamber during a metal etch process (2004-08-03),

6. 6749770 - Method of etching an anisotropic profile in platinum (2004-06-15),

7. 6730561 - Method of forming a cup capacitor (2004-05-04),

8. 6709609 - Plasma heating of a substrate with subsequent high temperature etching (2004-03-23),

9. 6692903 - Substrate cleaning apparatus and method (2004-02-17),

10. 6692648 - Method of plasma heating and etching a substrate (2004-02-17),

11. 6579796 - Method of etching platinum using a silicon carbide mask (2003-06-17),

12. 6541380 - Plasma etching process for metals and metal oxides, including metals and metal oxides inert to oxidation (2003-04-01),

13. 6482745 - Etching methods for anisotropic platinum profile (2002-11-19),

14. 6436838 - Method of patterning lead zirconium titanate and barium strontium titanate (2002-08-20),

15. 6368517 - Method for preventing corrosion of a dielectric material (2002-04-09),

Title: **Jeng H Hwang: Innovator in Semiconductor Technology**

Introduction

Jeng H Hwang is a prominent inventor based in Cupertino, CA, who has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 24 patents, Hwang’s work focuses primarily on innovative techniques for patterning and improving the efficiency of electronic components.

Latest Patents

Among Hwang’s latest patents are two notable innovations:

1. **Masking methods and etching sequences for patterning electrodes of high density RAM capacitors** - This patent outlines a method of etching a noble metal electrode layer on a substrate, producing semiconductor devices with electrodes closely spaced, measuring equal to or less than 0.35 μm. The approach involves heating the substrate above 150°C and using a high-density inductively coupled plasma of various etchant gases.

2. **Method of preventing short circuits in magnetic film stacks** - This invention presents a method for preventing electrical short circuits within multi-layer magnetic film stacks. It involves depositing a protective layer on an exposed surface of a magnetic material to safeguard it from conductive residues during the etching process, making it valuable in developing magneto-resistive random access memory (MRAM) devices.

Career Highlights

Throughout his career, Jeng H Hwang has held key positions in leading companies, notably Applied Materials, Inc., where his expertise has significantly driven advancements in semiconductor fabrication technologies. His innovative designs and techniques have enhanced the efficiency and capabilities of memory storage devices.

Collaborations

Hwang has collaborated with noteworthy professionals in the industry, including Steve S Y Mak and Chentsau Chris Ying. These partnerships have contributed to the development of groundbreaking technologies that address contemporary challenges in the semiconductor sector.

Conclusion

Jeng H Hwang’s innovative spirit and technical prowess have positioned him as a leading figure in semiconductor innovation. With a substantial number of patents and a dedication to improving electronic device performance, Hwang continues to shape the future of technology. His work not only exemplifies creativity but also highlights the importance of collaboration in driving technological advancements.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]