The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2005

Filed:

Feb. 20, 2002
Applicants:

Reginald R. Bowley, Jr., Essex Junction, VT (US);

Vincent J. Carlos, Essex Junction, VT (US);

James E. Doran, Essex Junction, VT (US);

Stephen E. Knight, Essex Junction, VT (US);

Robert K. Leidy, Burlington, VT (US);

Keith J. Machia, Swanton, VT (US);

Joseph E. Shaver, South Burlington, VT (US);

Dianne L. Sundling, Huntington, VT (US);

Inventors:

Reginald R. Bowley, Jr., Essex Junction, VT (US);

Vincent J. Carlos, Essex Junction, VT (US);

James E. Doran, Essex Junction, VT (US);

Stephen E. Knight, Essex Junction, VT (US);

Robert K. Leidy, Burlington, VT (US);

Keith J. Machia, Swanton, VT (US);

Joseph E. Shaver, South Burlington, VT (US);

Dianne L. Sundling, Huntington, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03C005/00 ;
U.S. Cl.
CPC ...
Abstract

A method uses three dimensional feature metrology for implementation of critical image control and feedback of lithographic focus and x/y tilt. The method is for measuring 3 dimensional profile changes in a photo sensitive film and feeding back compensatory exposure tool focus corrections to maintain a stable lithographic process. The measured focus change from the optimal tool focus offset is monitored directly on the critical product images for both contact hole and line images. Z Focus corrections and x/y tilt corrections are fed back independently of dose to maintain critical dimension (CD) control thereby achieving improved semiconductor wafer printing. Additionally, the method can be used to diagnose problems with the focusing system by measuring the relationship between line edge width and barometric pressure.


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