The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jul. 19, 2004
Ching-fa Yeh, Hsinchu, TW;
Yueh-chuan Lee, Hsinchu, TW;
Chih-chuan Hsu, Hsinchu, TW;
Kwo-hau Wu, Hsinchu, TW;
Shuo-cheng Wang, Hsinchu, TW;
Ching-Fa Yeh, Hsinchu, TW;
Yueh-Chuan Lee, Hsinchu, TW;
Chih-Chuan Hsu, Hsinchu, TW;
Kwo-Hau Wu, Hsinchu, TW;
Shuo-Cheng Wang, Hsinchu, TW;
National Science Council, Taipei, TW;
Abstract
The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.