Kwo-Hau Wu

Title: Kwo-Hau Wu: Innovator in Dielectric Technology

Introduction

Kwo-Hau Wu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of dielectric materials, particularly in methods to reduce stress in thick film dielectrics. With a total of 4 patents to his name, Wu's work has implications for various applications in electronics and materials science.

Latest Patents

One of Kwo-Hau Wu's latest patents is a method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure. This invention provides a technique to alleviate stress in thick spin-on dielectric layers by forming a sandwich dielectric structure. In this process, a first dielectric layer is formed on a substrate through spin coating, followed by the formation of a liquid phase deposited (LPD) silica layer on the first dielectric layer. A second dielectric layer is then applied on the LPD silica layer using spin coating. Additionally, the LPD silica layer can undergo nitrogen plasma treatment to enhance its thermal stability and resistance to water penetration.

Career Highlights

Kwo-Hau Wu has worked with the National Science Council, where he has contributed to various research initiatives. His expertise in dielectric materials has positioned him as a key figure in advancing technologies related to electronic components.

Collaborations

Throughout his career, Wu has collaborated with notable colleagues, including Ching-Fa Yeh and Yueh-Chuan Lee. These partnerships have fostered innovation and development in the field of dielectric technology.

Conclusion

Kwo-Hau Wu's contributions to the field of dielectric materials through his innovative patents demonstrate his commitment to advancing technology. His work continues to influence the development of more efficient electronic components.