The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Aug. 18, 2003
William Tze-you Chen, Endicott, NY (US);
Ho-ming Tong, Taipei, TW;
Chun-chi Lee, Kaohsiung, TW;
Su Tao, Kaohsiung, TW;
Jeng-da Wu, Kaohsiung Hsien, TW;
Chih-huang Chang, Tainan Hsien, TW;
Po-jen Cheng, Kaohsiung, TW;
William Tze-You Chen, Endicott, NY (US);
Ho-Ming Tong, Taipei, TW;
Chun-Chi Lee, Kaohsiung, TW;
Su Tao, Kaohsiung, TW;
Jeng-Da Wu, Kaohsiung Hsien, TW;
Chih-Huang Chang, Tainan Hsien, TW;
Po-Jen Cheng, Kaohsiung, TW;
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Abstract
An under-bump-metallurgy layer is provided. The under-bump-metallurgy layer is formed over the contact pad of a chip and a welding lump is formed over the under-ball-metallurgy layer. The under-bump-metallurgy layer comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is directly formed over the contact pad. The barrier layer made from a material such as nickel-vanadium alloy is formed over the adhesion layer. The wettable layer made from a material such as copper is formed over the barrier layer. The wettable layer has an overall thickness that ranges from about 3 μm to about 8 μm.