The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Sep. 04, 2003
Johnathan Faltermeier, Lagrangeville, NY (US);
Jeremy Stephens, Ossining, NY (US);
David Dobuzinsky, New Windsor, NY (US);
Larry Clevenger, Lagrangeville, NY (US);
Munir D. Naeem, Poughkeepsie, NY (US);
Chienfan Yu, Highland Mills, NY (US);
Larry Nesbit, Williston, VT (US);
Rama Divakaruni, Ossining, NY (US);
Michael Maldei, Durham, NC (US);
Johnathan Faltermeier, Lagrangeville, NY (US);
Jeremy Stephens, Ossining, NY (US);
David Dobuzinsky, New Windsor, NY (US);
Larry Clevenger, Lagrangeville, NY (US);
Munir D. Naeem, Poughkeepsie, NY (US);
Chienfan Yu, Highland Mills, NY (US);
Larry Nesbit, Williston, VT (US);
Rama Divakaruni, Ossining, NY (US);
Michael Maldei, Durham, NC (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes for the various material layers of the semiconductor device while forming the borderless contacts.