The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
May. 29, 2002
Feng-ru Chang, Tainan, TW;
Gau-ming LU, Taipei, TW;
Yeong-rong Chang, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 Å thick, and preferably at least 100 Å thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.