The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Nov. 04, 2002
Lee Luo, Fremont, CA (US);
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Janardhanan Anand Subramony, Santa Clara, CA (US);
Errol Antonio C. Sanchez, Dublin, CA (US);
Xiaoliang Jin, San Jose, CA (US);
Aihua Chen, San Jose, CA (US);
Chang-lian Yan, Chiba-Ken, JP;
Nobuo Tokai, Chiba, JP;
Yuji Maeda, Chiba, JP;
Randhir P. Singh Thakur, San Jose, CA (US);
Lee Luo, Fremont, CA (US);
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Janardhanan Anand Subramony, Santa Clara, CA (US);
Errol Antonio C. Sanchez, Dublin, CA (US);
Xiaoliang Jin, San Jose, CA (US);
Aihua Chen, San Jose, CA (US);
Chang-Lian Yan, Chiba-Ken, JP;
Nobuo Tokai, Chiba, JP;
Yuji Maeda, Chiba, JP;
Randhir P. Singh Thakur, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.