The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Feb. 04, 2002
Jaakko Niinistō, Helsinki, FI;
Matti Putkonen, Helsinki, FI;
Mikko Ritala, Espoo, FI;
Petri Räisänen, Berkeley Heights, NJ (US);
Antti Niskanen, Helsinki, FI;
Markku Leskelä, Espoo, FI;
Jaakko Niinistō, Helsinki, FI;
Matti Putkonen, Helsinki, FI;
Mikko Ritala, Espoo, FI;
Petri Räisänen, Berkeley Heights, NJ (US);
Antti Niskanen, Helsinki, FI;
Markku Leskelä, Espoo, FI;
ASM International, NV, Bilthoven, NL;
Abstract
The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.