The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Aug. 02, 2002
Benjamin Szu-min Lin, Hsinchu, TW;
Vencent Chang, Taipei, TW;
George Liu, Taoyuan Hsien, TW;
Cheng-chung Chen, Taoyuan Hsien, TW;
Benjamin Szu-Min Lin, Hsinchu, TW;
Vencent Chang, Taipei, TW;
George Liu, Taoyuan Hsien, TW;
Cheng-Chung Chen, Taoyuan Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A photolithographic process that involves building a sandwich photoresist structure. A first photoresist layer is formed over a substrate. An anti-reflection layer is formed over the first photoresist layer. A second photoresist layer is formed over the anti-reflection layer. A first photo-exposure is conducted and the exposed second photoresist layer is developed to pattern the second photoresist layer and the anti-reflection layer. Using the second photoresist layer and the anti-reflection layer as a mask, a second photo-exposure and a second photoresist development are conducted to pattern the first photoresist layer.