The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Mar. 20, 2003
Shih-Chi Fu, Taipei, TW;
Feng-Jia Shih, Hsin-Chu, TW;
Chia-Tung Ho, Taipei, TW;
Chih-Ta Wu, Hsinchu, TW;
Ching-Sen Kuo, Taipei, TW;
Jieh-Jang Chen, Hsinchu, TW;
Gwo-Yuh Shiau, Hsinchu, TW;
Chia-Shiung Tsia, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for protecting an alignment mark area during a CMP process including forming at least a first material layer over a process surface of a semiconductor wafer including active areas and alignment mark trenches formed in the at least one alignment mark area; forming at least a second material layer over the first material layer including the active areas and the at least one alignment mark area; lithographically patterning and etching the at least a second material layer to form at least a plurality lines of the at least a second material layer adjacent to the alignment mark trenches; and, carrying out a CMP process to remove at least a portion of the at least a second material layer.