The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2004
Filed:
Mar. 28, 2003
Applicant:
Inventors:
Wesley C. Natzle, New Paltz, NY (US);
Bruce B. Doris, Brewster, NY (US);
Sadanand V. Deshpande, Fishkill, NY (US);
Renee T. Mo, White Plains, NY (US);
Patricia A. O'Neil, Newburgh, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
The present invention provides a method for preserving an oxide hard mask for the purpose of avoiding growth of epi Si on the gate stack during raised source/drain formation. The oxide hard mask is preserved in the present invention by utilizing a method which includes a chemical oxide removal processing step instead of an aqueous HF etchant.
Natzle, Wesley. (2004). Preserving teos hard mask using cor for raised source-drain including removable/disposable spacer (U.S. Patent No. 6790733). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6790733
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile