The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Feb. 11, 2000
Stephan Alan Cohen, Wappingers Falls, NY (US);
Timothy Joseph Dalton, Ridgefield, CT (US);
John Anthony Fitzsimmons, Poughkeepsie, NY (US);
Stephen McConnell Gates, Ossining, NY (US);
Lynne M. Gignac, Beacon, NY (US);
Paul Charles Jamison, Hopewell Junction, NY (US);
Kang-Wook Lee, Yorktown Heights, NY (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
Darryl D. Restaino, Modena, NY (US);
Eva Simonyi, Bronx, NY (US);
Horatio Seymour Wildman, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.