The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Jun. 12, 2003
Angela Hui, Fremont, CA (US);
Minh V. Ngo, Fremont, CA (US);
Ning Cheng, Cupertino, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Rinji Sugino, San Jose, CA (US);
Tazrien Kamal, San Jose, CA (US);
Cinti X. Chen, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The at least one memory cell may be, for example, a flash memory cell, such as a SONOS flash memory cell. The structure further comprises an interlayer dielectric layer situated over the at least one memory cell and over the substrate. According to this exemplary embodiment, the structure further comprises a UV radiation blocking layer which comprises silicon-rich TCS nitride. Further, an oxide cap layer is situated over the UV radiation blocking layer. The structure might further comprise an antireflective coating layer over the oxide cap layer. The interlayer dielectric may comprise BPSG and the oxide cap layer may comprise TEOS oxide.