The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Feb. 14, 2003
Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance
Applicant:
Inventors:
Mark S. Chang, Los Altos, CA (US);
Darin Chan, Campbell, CA (US);
Chih Yuh Yang, San Jose, CA (US);
Lu You, San Jose, CA (US);
Scott A. Bell, San Jose, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Douglas J. Bonser, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/131 ; H01L 2/1469 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/131 ; H01L 2/1469 ; H01L 2/14763 ;
Abstract
An amorphous carbon layer is implanted with one or more dopants that enhance the etch resistivity of the amorphous carbon to etchants such as chlorine and HBr that are typically used to etch polysilicon. Such a layer may be pattern to form a handmask for etching polysilicon that provides improved pattern transfer accuracy compared to conventional undoped amorphous carbon.