The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Jul. 29, 2002
Yun Yu Wang, Poughquag, NY (US);
Johnathan Faltermeier, LaGrange, NY (US);
Colleen M. Snavely, Hopewell Junction, NY (US);
Michael Maldei, Durham, NC (US);
Michael M. Iwatake, Wappingers Falls, NY (US);
David M. Dobuzinsky, New Windsor, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Viraj Y. Sardesai, Poughkeepsie, NY (US);
Philip L. Flaitz, Newburgh, NY (US);
Lisa Y. Ninomiya, Danbury, CT (US);
Other;
Abstract
In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluric acid (DHF) clean are affected. Amorphous silicon is deposited and an anneal is performed to regrow and recrystallize amorphous silicon.