Lisa Y Ninomiya

Title: Innovations by Lisa Y Ninomiya

Introduction

Lisa Y Ninomiya is an accomplished inventor based in Danbury, CT (US). She has made significant contributions to the field of semiconductor technology, particularly in the area of amorphous silicon contacts. Her innovative methods have the potential to enhance the efficiency and performance of electronic devices.

Latest Patents

Lisa holds a patent for a method to enhance epitaxial regrowth in amorphous silicon contacts. This patent outlines a process where a liner reactive ion etch is applied to a substrate to remove silicon nitride and silicon oxide. Following this, an oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluoric acid (DHF) clean are performed. Amorphous silicon is then deposited, and an anneal is conducted to regrow and recrystallize the amorphous silicon. This innovative approach is crucial for improving the quality of silicon contacts in various applications.

Career Highlights

Throughout her career, Lisa has demonstrated a strong commitment to advancing technology in her field. With a total of 1 patent, she has established herself as a notable figure in semiconductor research. Her work has been recognized for its potential impact on the efficiency of electronic components.

Collaborations

Lisa has collaborated with talented individuals such as Yun Yu Wang and Johnathan E Faltermeier. These partnerships have allowed her to expand her research and contribute to innovative solutions in semiconductor technology.

Conclusion

Lisa Y Ninomiya is a pioneering inventor whose work in enhancing epitaxial regrowth in amorphous silicon contacts showcases her expertise and dedication to innovation. Her contributions are vital to the advancement of semiconductor technology and its applications in modern electronics.