The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Aug. 13, 2002
Applicant:
Inventors:
Go Saito, Yamaguchi, JP;
Hiroaki Ishimura, Yamaguchi, JP;
Yutaka Kudoh, Yamaguchi, JP;
Masamichi Sakaguchi, Yamaguchi, JP;
Kazuo Takata, Yamaguchi, JP;
Assignee:
Hitachi High-Technologies Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract
A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.