The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Oct. 01, 2002
Chun-Pey Cho, Hsinchu, TW;
Tsai-Sen Lin, Hsinchu, TW;
Chou-Shin Jou, Hsinchu, TW;
Chuan-Yi Wang, Hsinchu, TW;
Jen-Chieh Chang, Hsinchu, TW;
Yi-Fu Chung, Hsinchu, TW;
Huei-Ping Hsieh, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
Embodiments of the present invention relate to a method of making an IC capacitor. In one embodiment, the method comprises providing a substrate, forming a polycide layer on the substrate, and forming an insulating amorphous silicon layer on the polycide layer. The insulating amorphous silicon layer serves as an anti-reflection layer. The method further comprises implanting n-type ions into the insulating amorphous silicon layer to transform the insulating amorphous silicon layer into a conductive amorphous silicon layer, and patterning the polycide layer and the conductive amorphous silicon layer to form a bottom electrode on the substrate. A dielectric layer is formed on the bottom electrode and the substrate, and a conductor layer is formed on the dielectric layer. The conductor layer is patterned to form a top electrode on the dielectric layer.