The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Dec. 28, 1999
Chuan-Chieh Huang, Hsin-Chu, TW;
Wen-Hsiang Tang, Hsin-Chu, TW;
Ming-Shuo Yen, Hsin-Chu, TW;
Chiang-Jen Peng, Hsin-Chu, TW;
Pei-Hung Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method for detecting blind holes in the contact layer of a multi-chip semiconductor test wafer makes use of the fact that if the hole is not a blind hole, a subsequent etch step extends the hole a predetermined distance into the layer immediately underlying the contact layer. After a predetermined number of holes have been etched through the contact layer and for a predetermined distance into the layer underlying the contact layer, the contact layer is stripped to expose the holes in the underlying layer. These holes are scanned optically by a commercial apparatus that ordinarily detects wafer defects that resemble the holes. The missing holes are detected by comparing the holes of different chips on the test wafer. The test is particularly useful with a high density plasma etch because these holes typically have a very small diameter in relation to the thickness of the contact layer.