The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Sep. 30, 1999
Carl J. Galewski, Aromas, CA (US);
Claude A. Sands, Los Altos, CA (US);
Hector Velasco, Milpitas, CA (US);
Lawrence Matthysse, San Jose, CA (US);
Thomas E. Seidel, Sunnyvale, CA (US);
Other;
Abstract
Improvements to chemical vapor deposition processes are taught for depositing tungsten nitride in semiconductor manufacturing processes. In one irmproved process NF is used as a source of nitrogen, and a plasma is introduced under controlled conditions to control particle formation and lower the temperature at which acceptable films may be produced. In another set of processes substantially pure tungsten is produced by rapid thermal annealing of substantially amorphous tungsten nitride at temperatures lower than achieved in the art, by using hydrogen in the ambient atmosphere. In yet another set of new processes particle formation and step coverage enhancement when using NH as a nitrogen source is controlled by limiting the pressure at which source gases mix, by unique wall coating technique, and by controlling chamber wall temperature. In still another set of unique processes a graded film on oxide, starting with tungsten silicide quickly grading to tungsten nitride is produced by introducing silane in the NH chemistry under controlled conditions.