San Jose, CA, United States of America

Lawrence D Matthysse


Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 48(Granted Patents)


Company Filing History:


Years Active: 2003-2005

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Lawrence D Matthysse

Introduction

Lawrence D Matthysse is a notable inventor based in San Jose, CA, with a focus on advancements in atomic layer deposition and chemical vapor deposition processes. He holds 2 patents that reflect his expertise and innovative spirit in the semiconductor manufacturing industry.

Latest Patents

One of Matthysse's latest patents is titled "Method and apparatus for flexible atomic layer deposition." This invention involves an apparatus with a processing chamber that subjects a substrate to atomic layer deposition, allowing for the deposition of a film layer. The processing chamber includes at least a first gas switching port, and a gas switching manifold is coupled to the processing chamber to mix reactants with a neutral carrier gas, providing gas switching functionality for ALD processes. Additionally, an upstream gas source and pressure setting apparatus is coupled to the gas switching manifold, which includes at least a first reactant source, a second reactant source, and a neutral gas source. This apparatus is designed to provide a cascade of continuing, decreasing pressures.

Another significant patent by Matthysse is focused on "PECVD and CVD processes for WNx deposition." This patent teaches improvements to chemical vapor deposition processes for depositing tungsten nitride in semiconductor manufacturing. One of the improved processes utilizes NF as a source of nitrogen, introducing plasma under controlled conditions to manage particle formation and lower the temperature for acceptable film production. Furthermore, the patent describes methods for producing substantially pure tungsten through rapid thermal annealing of amorphous tungsten nitride at lower temperatures, using hydrogen in the ambient atmosphere. Additional processes control particle formation and enhance step coverage by managing the pressure at which source gases mix and controlling chamber wall temperature.

Career Highlights

Throughout his career, Matthysse has worked with various companies, including Genus, Inc. His contributions to the field have been instrumental in advancing semiconductor manufacturing techniques.

Collaborations

Matthysse has collaborated with notable professionals in the industry, including Thomas E Seidel and Ana R Londergan. Their combined expertise has likely contributed to the success of Matthysse's innovative projects.

Conclusion

Lawrence D Matthysse's work in atomic layer deposition and chemical vapor deposition processes showcases his significant contributions to the semiconductor industry. His patents reflect a commitment to innovation and improvement in manufacturing techniques.

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