The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Jun. 17, 2002
Ana R. Londergan, Campbell, CA (US);
Thomas E. Seidel, Sunnyvale, CA (US);
Lawrence D. Matthysse, San Jose, CA (US);
Ed C. Lee, Cupertino, CA (US);
Ana R. Londergan, Campbell, CA (US);
Thomas E. Seidel, Sunnyvale, CA (US);
Lawrence D. Matthysse, San Jose, CA (US);
Ed C. Lee, Cupertino, CA (US);
Genus, Inc., Sunnyvale, CA (US);
Abstract
An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier gas and provide gas switching functionality for ALD processes. An upstream gas source and pressure setting apparatus is coupled to the gas switching manifold. The upstream gas source and pressure setting apparatus includes at least a first reactant source, a second reactant source and a neutral gas source. Additionally, the upstream gas source and pressure setting apparatus is configured to provide a cascade of continuing, decreasing pressures.