The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Jan. 12, 2002
Applicant:
Inventors:
Kuo-Feng Chen, Hsinchu, TW;
Hsiu-Mei Yu, Hsin-Chu, TW;
Charles Tseng, Taichung, TW;
Ta-Yang Lin, Changhua, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.