The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
May. 30, 2001
Applicant:
Inventors:
Kai-Ming Ching, Taiping, TW;
Yu-Kung Hsiao, Tan-Yuan, TW;
Sheng-Liang Pan, Hsinchu, TW;
Kuo-Liang Lu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/30 ; G03F 7/38 ; G03F 7/11 ;
U.S. Cl.
CPC ...
G03F 7/30 ; G03F 7/38 ; G03F 7/11 ;
Abstract
A method of clearing photoresist on a wafer edge, including the following steps. A wafer having a upper exposed conductive layer is provided. The wafer having a center, an edge and a ring-shaped area proximate the wafer edge. A photoresist layer is formed upon the exposed conductive layer. The photoresist layer is removed from within the ring-shaped area by a rinse process to expose the conductive layer within the ring-shaped area. An oxygen diffusion barrier layer is formed over the photoresist layer.