The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Dec. 07, 1999
Stephen P. DeOrnellas, Santa Rosa, CA (US);
Leslie G. Jerde, Novato, CA (US);
Alferd Cofer, Petaluma, CA (US);
Robert C. Vail, Windsor, CA (US);
Kurt A. Olson, Sebastopol, CA (US);
Tegal Corporation, Petaluma, CA (US);
Abstract
A plasma etch reactor includes a upper electrode , a lower electrode , a peripheral ring electrode disposed therebetween. The upper electrode is grounded, the peripheral electrode is powered by a high frequency AC power supply, while the lower electrode is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber is configured with a solid source of gaseous species and a protruding baffle . A nozzle provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer . The configuration of the plasma etch reactor enhances the range of densities for the plasma in the reactor , which range can be selected by adjusting more of the power supplies