The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Mar. 30, 2001
Tuqiang Ni, Fremont, CA (US);
Weinan Jiang, San Jose, CA (US);
Conan Chiang, Los Altos, CA (US);
Frank Y. Lin, Fremont, CA (US);
Chris Lee, Kensington, CA (US);
Dai N. Lee, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O -free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.