The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Dec. 14, 2001
Applicant:
Inventors:
Junko Ohuchi, Yokohama, JP;
Yasuhiko Sato, Yokosuka, JP;
Eishi Shiobara, Inagi, JP;
Hisataka Hayashi, Yokohama, JP;
Tokuhisa Ohiwa, Kawasaki, JP;
Yasunobu Onishi, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.
Ohuchi, Junko. (2003). Manufacturing method of semiconductor device using mask pattern having high etching resistance (U.S. Patent No. 6576562). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6576562
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile