The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Mar. 01, 2001
Applicant:
Inventors:
Randall Cher Liang Cha, Singapore, SG;
Yeow Kheng Lim, Singapore, SG;
Alex See, Singapore, SG;
Tae Jong Lee, Singapore, SG;
Wang Ling Goh, Singapore, SG;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
Abstract
A silicon-on-insulator semiconductor device and manufacturing method therefor is provided in which a single wafer die contains a transistor over an insulator layer to form a fully depleted silicon-on-insulator device and a transistor formed in a semiconductor island over an insulator structure on the semiconductor wafer forms a partially depleted silicon-on-insulator device.