The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Apr. 22, 2002
Pin-Chin Connie Wang, Menlo Park, CA (US);
Fei Wang, San Jose, CA (US);
Kashmir Sahota, Fremont, CA (US);
Steven Avanzino, Cupertino, CA (US);
Amit Marathe, Milpitas, CA (US);
Matthew Buynoski, Palo Alto, CA (US);
Ercan Adem, Sunnyvale, CA (US);
Christy Woo, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In the present method of fabricating a semiconductor device, openings of different configurations (for example, different aspect ratios) are provided in a dielectric layer. Substantially undoped copper is deposited over the dielectric layer, filling the openings and extending above the dielectric layer, the different configurations of the openings providing an upper surface of the substantially undoped copper that is generally non-planar. A portion of the substantially undoped copper is removed to provide a substantially planar upper surface thereof, and a layer of doped copper is deposited on the upper surface of the substantially undoped copper. An anneal step is undertaken to difffuse the doping element into the copper in the openings.